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Wafer Specifications:.
Size: 2" diameter x 0.5mm,
Orientation: (100)
Dopping: undoped,
Conducting type: N-type.
Polish: one side polished by CMP
Roughness:
Packing: 1000 class clean room in a single wafer container
Typical Properties
Crystal Structure: cubic a = 6.095 03
Density: 5.619 g/cm3
Melting point: 710 oC
Grown by a special LEC technique and has the lowest EPD ( 2 ).
Thermal Expansion: 6.1 x 10 -6 /oK
Thermal conductivity: 270 mW / cm.k at 300K
Dopant
Type
Carrier Concentration
( cm-3)
Mobility
( cm2/V.Sec)
Resistivity
( ohm-cm )
EPD
(cm-2)
Undoped
P
1.0~2.0 x 1017
600 ~ 800
~0.1
Zn
P+
2.0~5.0 x 1018
300 ~ 500
~0.004
Te
N
2.0~6.0 x 1017
2500 ~ 3500
~0.05
High Resistivity
P or N
1.0~2.0 x 1016
460
~ 1.0
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