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GaSb (100), Te doped, 2" wafer 1sp
Your Price: $450.00
at Advanced Crystals & Processing Equipment
GaSb (100), Te doped, 2" wafer 1sp
GaSb, (100), Te doped,, N-type, 2" dia x 0.5mm, 1sp
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High quality GaSb single crystal wafers for semiconductor industries.
Size: 2" diameter x 0.5mm,
Orientation: (100)
Dopping: Te doped,
Conducting type: N-type.
Polish: one side polished.
Grown by a special LEC technique and has the lowest EPD ( 2 ).
We also provides high resistivity N and P type GaSb wafers.
Typical Properties
Crystal Structure: cubic a = 6.095 Å
Density: 5.619 g/cm3
Melting point: 710 oC
Thermal Expansion: 6.1 x 10 -6 /oK
Thermal conductivity: 270 mW / cm.k at 300K
Dopant
Type
Carrier Concentration
( cm-3)
Mobility
( cm2/V.Sec)
Resistivity
( ohm-cm )
EPD
(cm-2)
Undoped
P
1.0~2.0 x 1017
600 ~ 800
~0.1
Zn
P+
2.0~5.0 x 1018
300 ~ 500
~0.004
Te
N
2.0~6.0 x 1017
2500 ~ 3500
~0.05
High Resistivity
P or N
1.0~2.0 x 1016
460
~ 1.0
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