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2" InSb wafer (N type, undoped)
Size: 2" dia x 0.45mm thick
Orientation +/-0.2o with two reference flats
Polishing: one-side side polishd ( back side etched )
Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean roomProperties
Growth method LEC
Orientation (100) +/- 0.2o
Orientation Flat Two and
Doping Undoped
Conductivity type N type
Carrier Concentration (0.2- 0.85)E15 @77K
Mobility >(5.0-3.5)E5 cm2/Vs
EPD 2
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