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Si cystal Target (100) p doped, purity >99.995%, 3" dia., 4 mm th., 25 Ohm.cm Resistivity
Your Price: $150.00
at Advanced Crystals & Processing Equipment
Si cystal Target (100) p doped, purity >99.995%, 3" dia., 4 mm th., 25 Ohm.cm Resistivity
Si cystal Target (100) p doped, purity >99.995%, 3" dia., 4 mm th., 25 Ohm.cm Resistivity
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Composition: Si single crystal target
(100) orientation
N type, P doped
Purity: > 99.995 %
Density: > 100 % ( made by single crystal )
Size: 3" dia x 4 mm thickness
Resistivity: 25 Ohm.cm
fine ground for both sides
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