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GaP single crystal wafer,
Size: 2" diameter x 0.5mm,
Dopping: undoped,
Conducting type: N-type,
Orientation: (111)
Polished: one side polished.
Surafce Roughness:
Typical Physical Properties
Crystal Structure
Cubic. a =5.4505 07/FONT>
Growth Method
CZ (LEC)
Density
4.13 g/cm3
Melt Point
1480 oC
Thermal Expansion
5.3 x10-6 / oC
Dopant
S doped
undoped
Crystal growth axis
or
or
Conducting Type
N
N
Carrier Concentration
2 ~ 8 x1017 /cm3
4 ~ 6 x1016 /cm3
Resistivity
~ 0.03 W-cm
~ 0.3 W-cm
EPD
5
5
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