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GaAs single crystal waferGrowing Method: LECOrientation: (100)Size: 2" dia x 0.5mm Polishing: one side polishedDoping: undopedConductor type: N-type Semi-InsulatingResistivity: ~1 x 10^7 Ohm.cmMobility: ~4500 cm^2/V.SEPD: ~5x10^4/cm^-2
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Temporary Wafer Bonding
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III-V Foundry Services
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