LaAlO3, 10x10x0.5 mm substrate , 2 sides Epi polished
LaAlO3, 10x10x0.5 mm substrate , 2 sides Epi polished
Specifications Wafer Size: 10 x 10 x 0.5 mm thickness +/-0.05 mm, Wafer Orientation: (111) +/-0.5 Deg Polishing: Two sides CMP polished with free sub-surface damaged. Surface Roughness: Packed Under 1000 class clean room. (EPI ready) and in 100 grade plastic bog in a wafer continaer.
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