LaAlO3, Orn. EPI ready 2" x 0.5mm ...

 
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LaAlO3, Orn. EPI ready 2" x 0.5mm wafer 1 SP --- Qty discounted!

Your Price: $189.00

at Advanced Crystals & Processing Equipment

LaAlO3, Orn. EPI ready 2" x 0.5mm wafer 1 SP --- Qty discounted!
single crystal LaAlO3 wafer, (100), 2" diax0.5mm, EPI ready for 1 SP



LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors , magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.

Specifications
Wafer Size: 2" dia +/- 0.5 mm x 0.5 thickness +/-0.05 mm,
Wafer Orientation: (100) +/-0.5 Deg
Edge Orientation: +/-1 Deg with 16 mm Length
Polishing: CMP polished with free sub-surface damaged.
Surface Roughness:
Packed Under 1000 class clean room. (EPI ready) and in 100 grade plastic bog in a wafer continaer.









Typical Physical Properties


Crystal Structure

Rhombohedral at 25 oC: a=5.357 Angstroms c= 13.22 Angstroms Cubic at > 435 oC : a=3.821 Angstroms


Growth Method

Czochralski


Density

6.52 g/cm3


Melt Point

2080 oC


Thermal expansion

10 (x10-6/ oC)


Dielectric Constant

~ 25


Loss Tangent at 10 GHz

~3x10-4 @ 300K , ~0.6 x10-4 @77K


Color and Appearance

Tan to Brown based on annealing condition
Visible twins on polished substrate.


Chemical Stability

Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC






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Home > General Merchandise > Miscellaneous > Advanced Crystals & Processing Equipment > Round LaAlO3 Wafer <100> > LaAlO3, Orn. EPI ready 2" x 0.5mm wafer 1 SP --- Qty discounted!