Al2O3- Sapphire Wafe, R Plane 5x5x0....

 
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Al2O3- Sapphire Wafe, R Plane 5x5x0.5 mm, 1SP

Your Price: $10.00

at Advanced Crystals & Processing Equipment

Al2O3- Sapphire Wafe, R Plane 5x5x0.5 mm, 1SP
Al2O3- Sapphire Wafe, R Plane 5x5x0.5 mm , 1 SP



Fearures:


Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.

Wafer size: 5 mm x 5 mm x 0.5 mm thick

Orientation tolerance: +/-0.5 Deg. R plane orientation

Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra

1 side polished

Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.

Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a careTypical Properties:


Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,

Melting Point: 2040 degree C

Density: 3.97 gram/cm2

Growth Technique: CZ

crystal purity: >99.99%

Hardness: 9 ( mohs)

Thermal Expansion: 7.5x10-6 (/ oC)

Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )

Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis

Loss Tangent at 10 GHz: -5 at A axis , -5 at C axis



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Home > General Merchandise > Miscellaneous > Advanced Crystals & Processing Equipment > R-Plane (1-102) > Al2O3- Sapphire Wafe, R Plane 5x5x0.5 mm, 1SP