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Fearures:
Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
Wafer size: 5 mm x 5 mm x 0.5 mm thick
Orientation tolerance: +/-0.5 Deg. M plane orientation
Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra
2 sides polished from " product option "
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
Typical Properties:
Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
Melting Point: 2040 degree C
Density: 3.97 gram/cm2
Growth Technique: CZ
crystal purity: >99.99%
Hardness: 9 ( mohs)
Thermal Expansion: 7.5x10-6 (/ oC)
Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
Loss Tangent at 10 GHz: -5 at A axis , -5 at C axis
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