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LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors , magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
Specifications
Wafer Size: 10 x 10 mm x 0.5 mm thickness +/-0.05 mm,
Wafer Orientation: (100) +/-0.5 Deg
Polishing: One side CMP polished with free sub-surface damaged.
Surface Roughness:
Packed Under 1000 class clean room. (EPI ready) and in 100 grade plastic bog in a wafer continaer.
Typical Physical Properties
Crystal Structure
Rhombohedral at 25 oC: a=5.357 Angstroms c= 13.22 Angstroms Cubic at > 435 oC : a=3.821 Angstroms
Growth Method
Czochralski
Density
6.52 g/cm3
Melt Point
2080 oC
Thermal expansion
10 (x10-6/ oC)
Dielectric Constant
~ 25
Loss Tangent at 10 GHz
~3x10-4 @ 300K , ~0.6 x10-4 @77K
Color and Appearance
Tan to Brown based on annealing condition
Visible twins on polished substrate.
Chemical Stability
Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC
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